onsemi FGA20N120FTDTU IGBT, 40 A 1200 V, 3-Pin TO-3PN, Through Hole
Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±25V
Package Type
TO-3PN
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.8 x 5 x 18.9mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Product details
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 4.60
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€ 5.70
€ 5.70 Each (inc. VAT)
Standard
1
€ 4.60
€ 4.60 Each (Exc. Vat)
€ 5.70
€ 5.70 Each (inc. VAT)
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Standard
1
Stock information temporarily unavailable.
| Quantity | Unit price |
|---|---|
| 1 - 24 | € 4.60 |
| 25 - 99 | € 2.75 |
| 100 - 249 | € 2.70 |
| 250 - 499 | € 2.65 |
| 500+ | € 2.55 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±25V
Package Type
TO-3PN
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.8 x 5 x 18.9mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Product details
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products