onsemi FGA25N120ANTDTU IGBT, 50 A 1200 V, 3-Pin TO-3P, Through Hole
Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
312 W
Package Type
TO-3P
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.8 x 5 x 18.9mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Product details
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 8.00
€ 4.00 Each (In a Pack of 2) (Exc. Vat)
€ 9.92
€ 4.96 Each (In a Pack of 2) (inc. VAT)
Standard
2
€ 8.00
€ 4.00 Each (In a Pack of 2) (Exc. Vat)
€ 9.92
€ 4.96 Each (In a Pack of 2) (inc. VAT)
Stock information temporarily unavailable.
Standard
2
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 8 | € 4.00 | € 8.00 |
| 10 - 48 | € 3.15 | € 6.30 |
| 50 - 98 | € 2.90 | € 5.80 |
| 100 - 448 | € 2.70 | € 5.40 |
| 450+ | € 2.55 | € 5.10 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
312 W
Package Type
TO-3P
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.8 x 5 x 18.9mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Product details
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products