Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
349 W
Package Type
TO-3PN
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
16.2 x 5 x 20.1mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Toote üksikasjad
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 3,20
tk (torus 30) (ilma käibemaksuta)
€ 3,904
tk (torus 30) (koos käibemaksuga)
30
€ 3,20
tk (torus 30) (ilma käibemaksuta)
€ 3,904
tk (torus 30) (koos käibemaksuga)
30
Osta lahtiselt
kogus | Ühikuhind | Per Tuub |
---|---|---|
30 - 30 | € 3,20 | € 96,00 |
60+ | € 3,00 | € 90,00 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
349 W
Package Type
TO-3PN
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
16.2 x 5 x 20.1mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Toote üksikasjad
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.