onsemi FGH40N60SFDTU IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole

RS tootekood: 124-1334Bränd: onsemiTootja Part nr.: FGH40N60SFDTU
brand-logo
Kuva kõik kategoorias IGBTs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

290 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.6 x 4.7 x 20.6mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Toote üksikasjad

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 4,55

tk (torus 30) (ilma käibemaksuta)

€ 5,551

tk (torus 30) (koos käibemaksuga)

onsemi FGH40N60SFDTU IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole

€ 4,55

tk (torus 30) (ilma käibemaksuta)

€ 5,551

tk (torus 30) (koos käibemaksuga)

onsemi FGH40N60SFDTU IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole
Lao andmed ajutiselt ei ole saadaval.

Osta lahtiselt

kogusÜhikuhindPer Tuub
30 - 30€ 4,55€ 136,50
60 - 120€ 4,40€ 132,00
150 - 270€ 4,30€ 129,00
300+€ 4,10€ 123,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

290 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.6 x 4.7 x 20.6mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Toote üksikasjad

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada