onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole

RS tootekood: 181-1864Bränd: onsemiTootja Part nr.: FGH75T65SQDNL4
brand-logo
Kuva kõik kategoorias IGBTs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Maximum Continuous Collector Current

200 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

375 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.8 x 5.2 x 22.74mm

Maximum Operating Temperature

+175 °C

Energy Rating

160mJ

Minimum Operating Temperature

-55 °C

Gate Capacitance

5100pF

Päritoluriik

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 6,60

tk (torus 450) (ilma käibemaksuta)

€ 8,052

tk (torus 450) (koos käibemaksuga)

onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole

€ 6,60

tk (torus 450) (ilma käibemaksuta)

€ 8,052

tk (torus 450) (koos käibemaksuga)

onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole
Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Maximum Continuous Collector Current

200 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

375 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.8 x 5.2 x 22.74mm

Maximum Operating Temperature

+175 °C

Energy Rating

160mJ

Minimum Operating Temperature

-55 °C

Gate Capacitance

5100pF

Päritoluriik

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more