onsemi HGTG18N120BND IGBT, 54 A 1200 V, 3-Pin TO-247, Through Hole
Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
54 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
390 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.87 x 4.82 x 20.82mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 75.00
€ 5.00 Each (Supplied in a Tube) (Exc. Vat)
€ 93.00
€ 6.20 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
15
€ 75.00
€ 5.00 Each (Supplied in a Tube) (Exc. Vat)
€ 93.00
€ 6.20 Each (Supplied in a Tube) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
15
Stock information temporarily unavailable.
| Quantity | Unit price |
|---|---|
| 15 - 29 | € 5.00 |
| 30 - 99 | € 4.75 |
| 100 - 299 | € 4.10 |
| 300+ | € 3.95 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
54 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
390 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.87 x 4.82 x 20.82mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products