onsemi ISL9V2040D3ST IGBT, 10 A 450 V, 3-Pin DPAK (TO-252), Surface Mount
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiMaximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
450 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
130 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
6.73 x 6.22 x 2.39mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Toote üksikasjad
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 2,00
tk (rullis) (ilma käibemaksuta)
€ 2,44
tk (rullis) (koos käibemaksuga)
5
€ 2,00
tk (rullis) (ilma käibemaksuta)
€ 2,44
tk (rullis) (koos käibemaksuga)
5
Osta lahtiselt
| kogus | Ühikuhind | Per Rull |
|---|---|---|
| 5 - 5 | € 2,00 | € 10,00 |
| 10 - 95 | € 1,95 | € 9,75 |
| 100 - 245 | € 1,90 | € 9,50 |
| 250 - 495 | € 1,85 | € 9,25 |
| 500+ | € 1,80 | € 9,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiMaximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
450 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
130 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
6.73 x 6.22 x 2.39mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Toote üksikasjad
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products