Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 2mA
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
100 Ω
Mounting Type
Through Hole
Package Type
TO-92
Pin Count
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensions
5.2 x 4.19 x 5.33mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
5.2mm
Height
5.33mm
Width
4.19mm
Toote üksikasjad
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,409
tk (pakis) (ilma käibemaksuta)
€ 0,499
tk (pakis) (koos käibemaksuga)
50
€ 0,409
tk (pakis) (ilma käibemaksuta)
€ 0,499
tk (pakis) (koos käibemaksuga)
50
Osta lahtiselt
kogus | Ühikuhind | Per Kast |
---|---|---|
50 - 200 | € 0,409 | € 20,45 |
250 - 450 | € 0,243 | € 12,15 |
500 - 2450 | € 0,237 | € 11,85 |
2500 - 4950 | € 0,232 | € 11,60 |
5000+ | € 0,226 | € 11,30 |
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Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 2mA
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
100 Ω
Mounting Type
Through Hole
Package Type
TO-92
Pin Count
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensions
5.2 x 4.19 x 5.33mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
5.2mm
Height
5.33mm
Width
4.19mm
Toote üksikasjad
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.