Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
115 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
0.6 nC @ 4 V
Transistor Material
Si
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.01mm
Päritoluriik
China
Toote üksikasjad
N-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,381
tk (rullis) (ilma käibemaksuta)
€ 0,465
tk (rullis) (koos käibemaksuga)
20
€ 0,381
tk (rullis) (ilma käibemaksuta)
€ 0,465
tk (rullis) (koos käibemaksuga)
20
Osta lahtiselt
kogus | Ühikuhind | Per Rull |
---|---|---|
20 - 80 | € 0,381 | € 7,62 |
100 - 180 | € 0,195 | € 3,90 |
200 - 980 | € 0,169 | € 3,38 |
1000 - 1980 | € 0,146 | € 2,92 |
2000+ | € 0,138 | € 2,76 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
115 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
0.6 nC @ 4 V
Transistor Material
Si
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.01mm
Päritoluriik
China
Toote üksikasjad