onsemi MJ11012G Dual NPN Darlington Transistor, 30 A 60 V HFE:200, 2-Pin TO-204AA

RS tootekood: 163-0033Bränd: onsemiTootja Part nr.: MJ11012G
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Transistor Type

NPN

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

60 V

Maximum Emitter Base Voltage

5 V

Package Type

TO-204AA

Mounting Type

Through Hole

Pin Count

2

Transistor Configuration

Single

Number of Elements per Chip

2

Minimum DC Current Gain

200

Maximum Base Emitter Saturation Voltage

5 V

Maximum Collector Base Voltage

60 V

Maximum Collector Emitter Saturation Voltage

4 V

Height

8.51mm

Maximum Power Dissipation

200 W

Minimum Operating Temperature

-55 °C

Dimensions

21.08 (Dia.) x 8.51mm

Maximum Operating Temperature

+200 °C

Toote üksikasjad

NPN Darlington Transistors, ON Semiconductor

Standards

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.

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€ 6,10

Each (In a Tray of 100) (ilma käibemaksuta)

€ 7,442

Each (In a Tray of 100) (koos käibemaksuga)

onsemi MJ11012G Dual NPN Darlington Transistor, 30 A 60 V HFE:200, 2-Pin TO-204AA

€ 6,10

Each (In a Tray of 100) (ilma käibemaksuta)

€ 7,442

Each (In a Tray of 100) (koos käibemaksuga)

onsemi MJ11012G Dual NPN Darlington Transistor, 30 A 60 V HFE:200, 2-Pin TO-204AA
Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Transistor Type

NPN

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

60 V

Maximum Emitter Base Voltage

5 V

Package Type

TO-204AA

Mounting Type

Through Hole

Pin Count

2

Transistor Configuration

Single

Number of Elements per Chip

2

Minimum DC Current Gain

200

Maximum Base Emitter Saturation Voltage

5 V

Maximum Collector Base Voltage

60 V

Maximum Collector Emitter Saturation Voltage

4 V

Height

8.51mm

Maximum Power Dissipation

200 W

Minimum Operating Temperature

-55 °C

Dimensions

21.08 (Dia.) x 8.51mm

Maximum Operating Temperature

+200 °C

Toote üksikasjad

NPN Darlington Transistors, ON Semiconductor

Standards

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more