Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
20mA
Maximum Drain Source Voltage
15 V
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
30 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensions
2.9 x 1.3 x 1.04mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.04mm
Toote üksikasjad
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,346
tk (rullis) (ilma käibemaksuta)
€ 0,422
tk (rullis) (koos käibemaksuga)
50
€ 0,346
tk (rullis) (ilma käibemaksuta)
€ 0,422
tk (rullis) (koos käibemaksuga)
50
Osta lahtiselt
kogus | Ühikuhind | Per Rull |
---|---|---|
50 - 50 | € 0,346 | € 17,30 |
100 - 950 | € 0,202 | € 10,10 |
1000 - 2950 | € 0,136 | € 6,80 |
3000 - 8950 | € 0,119 | € 5,95 |
9000+ | € 0,116 | € 5,80 |
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Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
20mA
Maximum Drain Source Voltage
15 V
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
30 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensions
2.9 x 1.3 x 1.04mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.04mm
Toote üksikasjad
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.