Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
P
Idss Drain-Source Cut-off Current
-7 to -60mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
125 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
11pF
Source Gate On-Capacitance
11pF
Dimensions
3.04 x 1.4 x 1.01mm
Height
1.01mm
Width
1.4mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
3.04mm
Toote üksikasjad
P-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,106
tk (rullis 3000) (ilma käibemaksuta)
€ 0,129
tk (rullis 3000) (koos käibemaksuga)
3000
€ 0,106
tk (rullis 3000) (ilma käibemaksuta)
€ 0,129
tk (rullis 3000) (koos käibemaksuga)
3000
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
P
Idss Drain-Source Cut-off Current
-7 to -60mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
125 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
11pF
Source Gate On-Capacitance
11pF
Dimensions
3.04 x 1.4 x 1.01mm
Height
1.01mm
Width
1.4mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
3.04mm
Toote üksikasjad
P-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.