Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
0.3 to 1.5mA
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.92 x 1.3 x 0.93mm
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.93mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,338
tk (rullis) (ilma käibemaksuta)
€ 0,412
tk (rullis) (koos käibemaksuga)
25
€ 0,338
tk (rullis) (ilma käibemaksuta)
€ 0,412
tk (rullis) (koos käibemaksuga)
25
Osta lahtiselt
kogus | Ühikuhind | Per Rull |
---|---|---|
25 - 75 | € 0,338 | € 8,45 |
100 - 975 | € 0,197 | € 4,92 |
1000 - 2975 | € 0,134 | € 3,35 |
3000+ | € 0,118 | € 2,95 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
0.3 to 1.5mA
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.92 x 1.3 x 0.93mm
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.93mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.