Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
24 to 60mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.94mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
0.94mm
Width
1.3mm
Toote üksikasjad
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Palun kontrollige hiljem uuesti.
€ 0,388
tk (rullis) (ilma käibemaksuta)
€ 0,473
tk (rullis) (koos käibemaksuga)
5
€ 0,388
tk (rullis) (ilma käibemaksuta)
€ 0,473
tk (rullis) (koos käibemaksuga)
5
Osta lahtiselt
kogus | Ühikuhind | Per Rull |
---|---|---|
5 - 120 | € 0,388 | € 1,94 |
125 - 245 | € 0,37 | € 1,85 |
250 - 495 | € 0,35 | € 1,75 |
500 - 1245 | € 0,327 | € 1,64 |
1250+ | € 0,317 | € 1,58 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
24 to 60mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.94mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
0.94mm
Width
1.3mm
Toote üksikasjad
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.