N-Channel MOSFET, 150 mA, 30 V, 3-Pin SC-75 ON Semiconductor NTA7002NT1G

RS tootekood: 780-0501Bränd: onsemiTootja Part nr.: NTA7002NT1G
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

150 mA

Maximum Drain Source Voltage

30 V

Package Type

SC-75

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Width

0.9mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

1.65mm

Number of Elements per Chip

1

Height

0.8mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

N-Channel MOSFET with Schottky Diode, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 0,171

tk (pakis 50) (ilma käibemaksuta)

€ 0,209

tk (pakis 50) (koos käibemaksuga)

N-Channel MOSFET, 150 mA, 30 V, 3-Pin SC-75 ON Semiconductor NTA7002NT1G
Valige pakendi tüüp

€ 0,171

tk (pakis 50) (ilma käibemaksuta)

€ 0,209

tk (pakis 50) (koos käibemaksuga)

N-Channel MOSFET, 150 mA, 30 V, 3-Pin SC-75 ON Semiconductor NTA7002NT1G
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Pakend
50 - 450€ 0,171€ 8,55
500 - 1200€ 0,157€ 7,85
1250 - 2450€ 0,148€ 7,40
2500 - 4950€ 0,136€ 6,80
5000+€ 0,124€ 6,20

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

150 mA

Maximum Drain Source Voltage

30 V

Package Type

SC-75

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Width

0.9mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

1.65mm

Number of Elements per Chip

1

Height

0.8mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

N-Channel MOSFET with Schottky Diode, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more