P-Channel MOSFET, 25 A, 30 V, 3-Pin DPAK ON Semiconductor NTD25P03LT4G

RS tootekood: 773-7888PBränd: onsemiTootja Part nr.: NTD25P03LT4G
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

30 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

15 nC @ 5 V

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.38mm

Toote üksikasjad

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 1,05

tk (rullis) (ilma käibemaksuta)

€ 1,281

tk (rullis) (koos käibemaksuga)

P-Channel MOSFET, 25 A, 30 V, 3-Pin DPAK ON Semiconductor NTD25P03LT4G
Valige pakendi tüüp

€ 1,05

tk (rullis) (ilma käibemaksuta)

€ 1,281

tk (rullis) (koos käibemaksuga)

P-Channel MOSFET, 25 A, 30 V, 3-Pin DPAK ON Semiconductor NTD25P03LT4G
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Rull
5 - 20€ 1,05€ 5,25
25 - 120€ 0,766€ 3,83
125 - 620€ 0,613€ 3,06
625 - 1245€ 0,534€ 2,67
1250+€ 0,521€ 2,60

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

30 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

15 nC @ 5 V

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.38mm

Toote üksikasjad

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more