P-Channel MOSFET, 12 A, 60 V, 3-Pin IPAK onsemi NTD2955-1G

RS tootekood: 124-5399Bränd: onsemiTootja Part nr.: NTD2955-1G
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

55 W

Maximum Gate Source Voltage

-25 V, +25 V

Transistor Material

Si

Length

6.73mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Width

2.38mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Height

6.35mm

Minimum Operating Temperature

-55 °C

Päritoluriik

Malaysia

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P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,929

tk (torus 75) (ilma käibemaksuta)

€ 1,133

tk (torus 75) (koos käibemaksuga)

P-Channel MOSFET, 12 A, 60 V, 3-Pin IPAK onsemi NTD2955-1G

€ 0,929

tk (torus 75) (ilma käibemaksuta)

€ 1,133

tk (torus 75) (koos käibemaksuga)

P-Channel MOSFET, 12 A, 60 V, 3-Pin IPAK onsemi NTD2955-1G
Lao andmed ajutiselt ei ole saadaval.

Osta lahtiselt

kogusÜhikuhindPer Tuub
75 - 300€ 0,929€ 69,68
375 - 1425€ 0,904€ 67,80
1500 - 3675€ 0,881€ 66,08
3750+€ 0,86€ 64,50

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

55 W

Maximum Gate Source Voltage

-25 V, +25 V

Transistor Material

Si

Length

6.73mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Width

2.38mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Height

6.35mm

Minimum Operating Temperature

-55 °C

Päritoluriik

Malaysia

Toote üksikasjad

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more