N-Channel MOSFET, 40 A, 60 V, 3-Pin DPAK onsemi NTD5865NLT4G

RS tootekood: 719-2894Bränd: onsemiTootja Part nr.: NTD5865NLT4G
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

19 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

29 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.38mm

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N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

€ 1,45

tk (pakis 5) (ilma käibemaksuta)

€ 1,769

tk (pakis 5) (koos käibemaksuga)

N-Channel MOSFET, 40 A, 60 V, 3-Pin DPAK onsemi NTD5865NLT4G
Valige pakendi tüüp

€ 1,45

tk (pakis 5) (ilma käibemaksuta)

€ 1,769

tk (pakis 5) (koos käibemaksuga)

N-Channel MOSFET, 40 A, 60 V, 3-Pin DPAK onsemi NTD5865NLT4G
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Pakend
5 - 20€ 1,45€ 7,25
25 - 120€ 0,962€ 4,81
125 - 620€ 0,668€ 3,34
625 - 1245€ 0,611€ 3,06
1250+€ 0,595€ 2,98

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

19 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

29 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.38mm

Toote üksikasjad

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more