Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
915 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-523 (SC-89)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
950 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±6 V
Length
1.7mm
Typical Gate Charge @ Vgs
1.82 nC @ 4.5 V
Width
0.95mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Automotive Standard
AEC-Q101
Height
0.8mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,064
tk (rullis 3000) (ilma käibemaksuta)
€ 0,078
tk (rullis 3000) (koos käibemaksuga)
3000
€ 0,064
tk (rullis 3000) (ilma käibemaksuta)
€ 0,078
tk (rullis 3000) (koos käibemaksuga)
3000
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
915 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-523 (SC-89)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
950 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±6 V
Length
1.7mm
Typical Gate Charge @ Vgs
1.82 nC @ 4.5 V
Width
0.95mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Automotive Standard
AEC-Q101
Height
0.8mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V