Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
20 V
Package Type
ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
115 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.1mm
Typical Gate Charge @ Vgs
2.6 nC @ 4.5 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Päritoluriik
Malaysia
Toote üksikasjad
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,192
tk (rullis 3000) (ilma käibemaksuta)
€ 0,234
tk (rullis 3000) (koos käibemaksuga)
3000
€ 0,192
tk (rullis 3000) (ilma käibemaksuta)
€ 0,234
tk (rullis 3000) (koos käibemaksuga)
3000
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
20 V
Package Type
ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
115 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.1mm
Typical Gate Charge @ Vgs
2.6 nC @ 4.5 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Päritoluriik
Malaysia
Toote üksikasjad