onsemi N-Channel MOSFET, 46 A, 650 V, 3-Pin TO-247 NTHL065N65S3F
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
46 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
337 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.82mm
Length
15.87mm
Typical Gate Charge @ Vgs
98 nC @ 10 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
20.82mm
Päritoluriik
China
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€ 10,70
€ 10,70 tk (ilma käibemaksuta)
€ 13,27
€ 13,27 tk (koos käibemaksuga)
1
€ 10,70
€ 10,70 tk (ilma käibemaksuta)
€ 13,27
€ 13,27 tk (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
1
Lao andmed ajutiselt ei ole saadaval.
| kogus | Ühikuhind |
|---|---|
| 1 - 9 | € 10,70 |
| 10+ | € 9,20 |
Ideate. Create. Collaborate
JOIN FOR FREE
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Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
46 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
337 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.82mm
Length
15.87mm
Typical Gate Charge @ Vgs
98 nC @ 10 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
20.82mm
Päritoluriik
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products