Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
250 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.72 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Width
1.35mm
Length
2.2mm
Typical Gate Charge @ Vgs
0.9 nC @ 5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1mm
Päritoluriik
China
Toote üksikasjad
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 270,00
€ 0,09 tk (rullis 3000) (ilma käibemaksuta)
€ 329,40
€ 0,11 tk (rullis 3000) (koos käibemaksuga)
3000
€ 270,00
€ 0,09 tk (rullis 3000) (ilma käibemaksuta)
€ 329,40
€ 0,11 tk (rullis 3000) (koos käibemaksuga)
3000
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
250 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.72 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Width
1.35mm
Length
2.2mm
Typical Gate Charge @ Vgs
0.9 nC @ 5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1mm
Päritoluriik
China
Toote üksikasjad