onsemi Dual N/P-Channel MOSFET, 4.1 A, 4.6 A, 20 V, 6-Pin WDFN NTLJD3119CTBG
Technical Document
Specifications
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
4.1 A, 4.6 A
Maximum Drain Source Voltage
20 V
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
120 mΩ, 200 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.3 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Length
2mm
Typical Gate Charge @ Vgs
3.7 nC @ 4.5 V, 5.5 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
2
Width
2mm
Transistor Material
Si
Height
0.75mm
Minimum Operating Temperature
-55 °C
Product details
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
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€ 7.40
€ 0.74 Each (In a Pack of 10) (Exc. Vat)
€ 9.18
€ 0.918 Each (In a Pack of 10) (inc. VAT)
Standard
10
€ 7.40
€ 0.74 Each (In a Pack of 10) (Exc. Vat)
€ 9.18
€ 0.918 Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | € 0.74 | € 7.40 |
| 100 - 240 | € 0.638 | € 6.38 |
| 250 - 490 | € 0.553 | € 5.53 |
| 500 - 990 | € 0.486 | € 4.86 |
| 1000+ | € 0.442 | € 4.42 |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Document
Specifications
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
4.1 A, 4.6 A
Maximum Drain Source Voltage
20 V
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
120 mΩ, 200 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.3 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Length
2mm
Typical Gate Charge @ Vgs
3.7 nC @ 4.5 V, 5.5 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
2
Width
2mm
Transistor Material
Si
Height
0.75mm
Minimum Operating Temperature
-55 °C
Product details
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products