Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
123 A
Maximum Drain Source Voltage
80 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
6.1mm
Length
5.1mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.05mm
Päritoluriik
Malaysia
€ 1 483,50
€ 0,989 tk (rullis 1500) (ilma käibemaksuta)
€ 1 809,87
€ 1,207 tk (rullis 1500) (koos käibemaksuga)
1500
€ 1 483,50
€ 0,989 tk (rullis 1500) (ilma käibemaksuta)
€ 1 809,87
€ 1,207 tk (rullis 1500) (koos käibemaksuga)
1500
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
123 A
Maximum Drain Source Voltage
80 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
6.1mm
Length
5.1mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.05mm
Päritoluriik
Malaysia