onsemi N-Channel MOSFET, 123 A, 80 V, 5-Pin DFN NTMFS6H818NT1G
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
123 A
Maximum Drain Source Voltage
80 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
6.1mm
Length
5.1mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.05mm
Päritoluriik
Malaysia
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 9,50
€ 1,90 tk (pakis 5) (ilma käibemaksuta)
€ 11,59
€ 2,318 tk (pakis 5) (koos käibemaksuga)
Standard
5
€ 9,50
€ 1,90 tk (pakis 5) (ilma käibemaksuta)
€ 11,59
€ 2,318 tk (pakis 5) (koos käibemaksuga)
Standard
5
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
| kogus | Ühikuhind | Per Pakend |
|---|---|---|
| 5 - 45 | € 1,90 | € 9,50 |
| 50 - 95 | € 1,65 | € 8,25 |
| 100 - 495 | € 1,40 | € 7,00 |
| 500 - 995 | € 1,25 | € 6,25 |
| 1000+ | € 1,15 | € 5,75 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
123 A
Maximum Drain Source Voltage
80 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
6.1mm
Length
5.1mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.05mm
Päritoluriik
Malaysia
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products