Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
554.5 A
Maximum Drain Source Voltage
40 V
Package Type
DFNW8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
660 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
245.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
8mm
Length
8.1mm
Typical Gate Charge @ Vgs
126 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.15mm
€ 9,00
€ 4,50 tk (pakis 2) (ilma käibemaksuta)
€ 11,16
€ 5,58 tk (pakis 2) (koos käibemaksuga)
Standard
2
€ 9,00
€ 4,50 tk (pakis 2) (ilma käibemaksuta)
€ 11,16
€ 5,58 tk (pakis 2) (koos käibemaksuga)
Standard
2
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Pakend |
---|---|---|
2 - 18 | € 4,50 | € 9,00 |
20 - 198 | € 3,90 | € 7,80 |
200 - 998 | € 3,35 | € 6,70 |
1000 - 1998 | € 2,95 | € 5,90 |
2000+ | € 2,70 | € 5,40 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
554.5 A
Maximum Drain Source Voltage
40 V
Package Type
DFNW8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
660 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
245.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
8mm
Length
8.1mm
Typical Gate Charge @ Vgs
126 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.15mm