N-Channel MOSFET, 27 A, 60 V, 4-Pin LFPAK, SOT-669 onsemi NTMYS021N06CLTWGOS

RS tootekood: 195-2534Bränd: onsemiTootja Part nr.: NTMYS021N06CLTWG
brand-logo
View all in MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

27 A

Maximum Drain Source Voltage

60 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

31.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

28 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

4.25mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

5mm

Typical Gate Charge @ Vgs

5 nC @ 10 V

Height

1.15mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 2,05

tk (rullis 3000) (ilma käibemaksuta)

€ 2,501

tk (rullis 3000) (koos käibemaksuga)

N-Channel MOSFET, 27 A, 60 V, 4-Pin LFPAK, SOT-669 onsemi NTMYS021N06CLTWGOS

€ 2,05

tk (rullis 3000) (ilma käibemaksuta)

€ 2,501

tk (rullis 3000) (koos käibemaksuga)

N-Channel MOSFET, 27 A, 60 V, 4-Pin LFPAK, SOT-669 onsemi NTMYS021N06CLTWGOS
Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

27 A

Maximum Drain Source Voltage

60 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

31.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

28 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

4.25mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

5mm

Typical Gate Charge @ Vgs

5 nC @ 10 V

Height

1.15mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more