Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
63 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
12.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.28mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Width
15.75mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.82mm
Toote üksikasjad
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,976
tk (torus) (ilma käibemaksuta)
€ 1,191
tk (torus) (koos käibemaksuga)
20
€ 0,976
tk (torus) (ilma käibemaksuta)
€ 1,191
tk (torus) (koos käibemaksuga)
20
Osta lahtiselt
kogus | Ühikuhind | Per Tuub |
---|---|---|
20 - 80 | € 0,976 | € 19,52 |
100 - 240 | € 0,732 | € 14,64 |
260 - 480 | € 0,711 | € 14,22 |
500 - 980 | € 0,621 | € 12,42 |
1000+ | € 0,504 | € 10,08 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
63 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
12.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.28mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Width
15.75mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.82mm
Toote üksikasjad