Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
48 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Width
4.9mm
Length
10.63mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
16.12mm
Päritoluriik
China
€ 7,30
€ 7,30 tk (ilma käibemaksuta)
€ 8,91
€ 8,91 tk (koos käibemaksuga)
1
€ 7,30
€ 7,30 tk (ilma käibemaksuta)
€ 8,91
€ 8,91 tk (koos käibemaksuga)
1
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind |
---|---|
1 - 9 | € 7,30 |
10+ | € 6,30 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
48 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Width
4.9mm
Length
10.63mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
16.12mm
Päritoluriik
China