Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
470 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
17.8 nC @ 4.5 V
Width
1.4mm
Number of Elements per Chip
1
Forward Diode Voltage
1V
Height
1.01mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,141
tk (rullis 3000) (ilma käibemaksuta)
€ 0,172
tk (rullis 3000) (koos käibemaksuga)
3000
€ 0,141
tk (rullis 3000) (ilma käibemaksuta)
€ 0,172
tk (rullis 3000) (koos käibemaksuga)
3000
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
470 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
17.8 nC @ 4.5 V
Width
1.4mm
Number of Elements per Chip
1
Forward Diode Voltage
1V
Height
1.01mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China