N-Channel MOSFET, 560 mA, 30 V, 3-Pin SOT-23 onsemi NTR4003NG

RS tootekood: 780-4742Bränd: onsemiTootja Part nr.: NTR4003NT3G
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

560 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

29 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.01mm

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N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 0,262

tk (pakis 50) (ilma käibemaksuta)

€ 0,32

tk (pakis 50) (koos käibemaksuga)

N-Channel MOSFET, 560 mA, 30 V, 3-Pin SOT-23 onsemi NTR4003NG
Valige pakendi tüüp

€ 0,262

tk (pakis 50) (ilma käibemaksuta)

€ 0,32

tk (pakis 50) (koos käibemaksuga)

N-Channel MOSFET, 560 mA, 30 V, 3-Pin SOT-23 onsemi NTR4003NG
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Pakend
50 - 450€ 0,262€ 13,10
500 - 1200€ 0,242€ 12,10
1250 - 2450€ 0,228€ 11,40
2500 - 4950€ 0,21€ 10,50
5000+€ 0,193€ 9,65

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

560 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

29 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.01mm

Toote üksikasjad

N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more