onsemi P-Channel MOSFET, 3.5 A, 30 V, 3-Pin SOT-23 NTR4171PT1G

RS tootekood: 780-4749Bränd: onsemiTootja Part nr.: NTR4171PT1G
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

15.6 nC @ 10 V, 7.4 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.01mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

€ 8,35

€ 0,334 tk (pakis 25) (ilma käibemaksuta)

€ 10,19

€ 0,407 tk (pakis 25) (koos käibemaksuga)

onsemi P-Channel MOSFET, 3.5 A, 30 V, 3-Pin SOT-23 NTR4171PT1G
Valige pakendi tüüp

€ 8,35

€ 0,334 tk (pakis 25) (ilma käibemaksuta)

€ 10,19

€ 0,407 tk (pakis 25) (koos käibemaksuga)

onsemi P-Channel MOSFET, 3.5 A, 30 V, 3-Pin SOT-23 NTR4171PT1G
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

15.6 nC @ 10 V, 7.4 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.01mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada