N-Channel MOSFET, 433 A, 40 V, 8-Pin DFNW8 onsemi NVMTS0D7N04CLTXG

RS tootekood: 185-8159Bränd: onsemiTootja Part nr.: NVMTS0D7N04CLTXG
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

433 A

Maximum Drain Source Voltage

40 V

Package Type

DFNW8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

630 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

205 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

8.1mm

Typical Gate Charge @ Vgs

99 nC @ 4.5 V

Height

1.15mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Päritoluriik

Philippines

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Lao andmed ajutiselt ei ole saadaval.

€ 6,70

tk (rullis 3000) (ilma käibemaksuta)

€ 8,174

tk (rullis 3000) (koos käibemaksuga)

N-Channel MOSFET, 433 A, 40 V, 8-Pin DFNW8 onsemi NVMTS0D7N04CLTXG

€ 6,70

tk (rullis 3000) (ilma käibemaksuta)

€ 8,174

tk (rullis 3000) (koos käibemaksuga)

N-Channel MOSFET, 433 A, 40 V, 8-Pin DFNW8 onsemi NVMTS0D7N04CLTXG
Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

433 A

Maximum Drain Source Voltage

40 V

Package Type

DFNW8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

630 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

205 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

8.1mm

Typical Gate Charge @ Vgs

99 nC @ 4.5 V

Height

1.15mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Päritoluriik

Philippines

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more