Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
433 A
Maximum Drain Source Voltage
40 V
Package Type
DFNW8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
630 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
205 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
8mm
Length
8.1mm
Typical Gate Charge @ Vgs
99 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.15mm
Automotive Standard
AEC-Q101
Päritoluriik
Philippines
€ 16 500,00
€ 5,50 tk (rullis 3000) (ilma käibemaksuta)
€ 20 460,00
€ 6,82 tk (rullis 3000) (koos käibemaksuga)
3000
€ 16 500,00
€ 5,50 tk (rullis 3000) (ilma käibemaksuta)
€ 20 460,00
€ 6,82 tk (rullis 3000) (koos käibemaksuga)
3000
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
433 A
Maximum Drain Source Voltage
40 V
Package Type
DFNW8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
630 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
205 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
8mm
Length
8.1mm
Typical Gate Charge @ Vgs
99 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.15mm
Automotive Standard
AEC-Q101
Päritoluriik
Philippines