Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Renesas ElectronicsMaximum Continuous Collector Current
35 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
40 W
Package Type
TO-220FL
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
10 x 4.5 x 15mm
Gate Capacitance
900pF
Maximum Operating Temperature
+150 °C
Päritoluriik
Japan
Toote üksikasjad
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Palun kontrollige hiljem uuesti.
€ 4,10
tk (pakis 2) (ilma käibemaksuta)
€ 5,002
tk (pakis 2) (koos käibemaksuga)
2
€ 4,10
tk (pakis 2) (ilma käibemaksuta)
€ 5,002
tk (pakis 2) (koos käibemaksuga)
2
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
2 - 8 | € 4,10 | € 8,20 |
10 - 18 | € 3,90 | € 7,80 |
20 - 48 | € 3,80 | € 7,60 |
50 - 98 | € 3,65 | € 7,30 |
100+ | € 3,60 | € 7,20 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Renesas ElectronicsMaximum Continuous Collector Current
35 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
40 W
Package Type
TO-220FL
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
10 x 4.5 x 15mm
Gate Capacitance
900pF
Maximum Operating Temperature
+150 °C
Päritoluriik
Japan
Toote üksikasjad
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.