Renesas Electronics RJH60F5DPQ-A0#T0 IGBT, 80 A 600 V, 3-Pin TO-247A, Through Hole
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Renesas ElectronicsMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
260.4 W
Package Type
TO-247A
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.94 x 5.02 x 21.13mm
Gate Capacitance
2780pF
Maximum Operating Temperature
+150 °C
Toote üksikasjad
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 4,75
tk (pakis 2) (ilma käibemaksuta)
€ 5,795
tk (pakis 2) (koos käibemaksuga)
2
€ 4,75
tk (pakis 2) (ilma käibemaksuta)
€ 5,795
tk (pakis 2) (koos käibemaksuga)
2
Osta lahtiselt
| kogus | Ühikuhind | Per Pakend |
|---|---|---|
| 2 - 4 | € 4,75 | € 9,50 |
| 6 - 10 | € 4,50 | € 9,00 |
| 12 - 48 | € 4,30 | € 8,60 |
| 50 - 98 | € 4,05 | € 8,10 |
| 100+ | € 3,85 | € 7,70 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Renesas ElectronicsMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
260.4 W
Package Type
TO-247A
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.94 x 5.02 x 21.13mm
Gate Capacitance
2780pF
Maximum Operating Temperature
+150 °C
Toote üksikasjad
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products