ROHM BSM 2 Type N-Channel SiC Power Module, 300 A, 1200 V Enhancement, 4-Pin BSM300D12P2E001

RS Stock No.: 144-2255Brand: ROHMManufacturers Part No.: BSM300D12P2E001
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Technical Document

Specifications

Brand

ROHM

Product Type

SiC Power Module

Channel Type

Type N

Maximum Continuous Drain Current Id

300A

Maximum Drain Source Voltage Vds

1200V

Series

BSM

Mount Type

Surface Mount

Pin Count

4

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1875W

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Length

152mm

Height

17mm

Number of Elements per Chip

2

Country of Origin

Japan

Product details

SiC Power Modules, ROHM

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature

MOSFET Transistors, ROHM Semiconductor

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Stock information temporarily unavailable.

€ 4,260.00

€ 1,065.00 Each (In a Tray of 4) (Exc. Vat)

€ 5,282.40

€ 1,320.60 Each (In a Tray of 4) (inc. VAT)

ROHM BSM 2 Type N-Channel SiC Power Module, 300 A, 1200 V Enhancement, 4-Pin BSM300D12P2E001

4

Available in multiples of 4
4€ 4,260.00
8€ 8,520.00
12€ 12,780.00
16€ 17,040.00
20€ 21,300.00
24€ 25,560.00
28€ 29,820.00
32€ 34,080.00
36€ 38,340.00
40€ 42,600.00
44€ 46,860.00
48€ 51,120.00
52€ 55,380.00
56€ 59,640.00
60€ 63,900.00

€ 4,260.00

€ 1,065.00 Each (In a Tray of 4) (Exc. Vat)

€ 5,282.40

€ 1,320.60 Each (In a Tray of 4) (inc. VAT)

ROHM BSM 2 Type N-Channel SiC Power Module, 300 A, 1200 V Enhancement, 4-Pin BSM300D12P2E001

Stock information temporarily unavailable.

4

Available in multiples of 4
4€ 4,260.00
8€ 8,520.00
12€ 12,780.00
16€ 17,040.00
20€ 21,300.00
24€ 25,560.00
28€ 29,820.00
32€ 34,080.00
36€ 38,340.00
40€ 42,600.00
44€ 46,860.00
48€ 51,120.00
52€ 55,380.00
56€ 59,640.00
60€ 63,900.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

ROHM

Product Type

SiC Power Module

Channel Type

Type N

Maximum Continuous Drain Current Id

300A

Maximum Drain Source Voltage Vds

1200V

Series

BSM

Mount Type

Surface Mount

Pin Count

4

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1875W

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Length

152mm

Height

17mm

Number of Elements per Chip

2

Country of Origin

Japan

Product details

SiC Power Modules, ROHM

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature

MOSFET Transistors, ROHM Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more