ROHM RQ5E035BN N-Channel MOSFET, 3.5 A, 30 V, 3-Pin TSMT-3 RQ5E035BNTCL

RS tootekood: 133-3300PBränd: ROHMTootja Part nr.: RQ5E035BNTCL
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

30 V

Series

RQ5E035BN

Package Type

TSMT-3

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

56 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

1.8mm

Length

3mm

Typical Gate Charge @ Vgs

6 nC @ 10 V

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

0.95mm

Toote üksikasjad

N-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

€ 67,50

€ 0,27 tk (rullis) (ilma käibemaksuta)

€ 82,35

€ 0,329 tk (rullis) (koos käibemaksuga)

ROHM RQ5E035BN N-Channel MOSFET, 3.5 A, 30 V, 3-Pin TSMT-3 RQ5E035BNTCL
Valige pakendi tüüp

€ 67,50

€ 0,27 tk (rullis) (ilma käibemaksuta)

€ 82,35

€ 0,329 tk (rullis) (koos käibemaksuga)

ROHM RQ5E035BN N-Channel MOSFET, 3.5 A, 30 V, 3-Pin TSMT-3 RQ5E035BNTCL
Lao andmed ajutiselt ei ole saadaval.
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kogusÜhikuhindPer Rull
250 - 450€ 0,27€ 13,50
500 - 2450€ 0,262€ 13,10
2500 - 4950€ 0,252€ 12,60
5000+€ 0,246€ 12,30

Ideate. Create. Collaborate

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No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

30 V

Series

RQ5E035BN

Package Type

TSMT-3

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

56 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

1.8mm

Length

3mm

Typical Gate Charge @ Vgs

6 nC @ 10 V

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

0.95mm

Toote üksikasjad

N-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more