Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
20 V
Series
RU1C002ZP
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
150 mW
Maximum Gate Source Voltage
-10 V, +10 V
Width
1.35mm
Number of Elements per Chip
1
Length
2.1mm
Typical Gate Charge @ Vgs
1.4 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Toote üksikasjad
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
€ 6,60
€ 0,066 tk (pakis 100) (ilma käibemaksuta)
€ 8,05
€ 0,081 tk (pakis 100) (koos käibemaksuga)
Standard
100
€ 6,60
€ 0,066 tk (pakis 100) (ilma käibemaksuta)
€ 8,05
€ 0,081 tk (pakis 100) (koos käibemaksuga)
Standard
100
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Pakend |
---|---|---|
100 - 400 | € 0,066 | € 6,60 |
500 - 900 | € 0,063 | € 6,30 |
1000 - 2400 | € 0,052 | € 5,20 |
2500 - 4900 | € 0,05 | € 5,00 |
5000+ | € 0,047 | € 4,70 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
20 V
Series
RU1C002ZP
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
150 mW
Maximum Gate Source Voltage
-10 V, +10 V
Width
1.35mm
Number of Elements per Chip
1
Length
2.1mm
Typical Gate Charge @ Vgs
1.4 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Toote üksikasjad