Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
1700 V
Series
SCT2H12NZ
Package Type
TO-3PFM
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +22 V
Transistor Material
Si
Length
16mm
Typical Gate Charge @ Vgs
14 nC @ 18 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Height
21mm
Forward Diode Voltage
4.3V
Toote üksikasjad
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 8,90
tk (pakis 2) (ilma käibemaksuta)
€ 10,858
tk (pakis 2) (koos käibemaksuga)
2
€ 8,90
tk (pakis 2) (ilma käibemaksuta)
€ 10,858
tk (pakis 2) (koos käibemaksuga)
2
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
2 - 8 | € 8,90 | € 17,80 |
10+ | € 7,40 | € 14,80 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
1700 V
Series
SCT2H12NZ
Package Type
TO-3PFM
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +22 V
Transistor Material
Si
Length
16mm
Typical Gate Charge @ Vgs
14 nC @ 18 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Height
21mm
Forward Diode Voltage
4.3V
Toote üksikasjad