N-Channel MOSFET, 11 A, 650 V, 3-Pin DPAK STMicroelectronics STD13NM60N

RS tootekood: 760-9881Bränd: STMicroelectronicsTootja Part nr.: STD13NM60N
brand-logo
View all in MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

360 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

90 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Typical Gate Charge @ Vgs

30 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.6mm

Width

6.2mm

Transistor Material

Si

Height

2.4mm

Series

MDmesh

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 2,60

tk (ilma käibemaksuta)

€ 3,17

tk (koos käibemaksuga)

N-Channel MOSFET, 11 A, 650 V, 3-Pin DPAK STMicroelectronics STD13NM60N

€ 2,60

tk (ilma käibemaksuta)

€ 3,17

tk (koos käibemaksuga)

N-Channel MOSFET, 11 A, 650 V, 3-Pin DPAK STMicroelectronics STD13NM60N
Lao andmed ajutiselt ei ole saadaval.

Osta lahtiselt

kogusÜhikuhind
1 - 4€ 2,60
5 - 24€ 2,25
25 - 49€ 2,00
50 - 99€ 1,80
100+€ 1,65

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

360 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

90 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Typical Gate Charge @ Vgs

30 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.6mm

Width

6.2mm

Transistor Material

Si

Height

2.4mm

Series

MDmesh

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more