Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Length
6.6mm
Typical Gate Charge @ Vgs
30 nC @ 10 V
Width
6.2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Height
2.4mm
Series
STripFET
Minimum Operating Temperature
-55 °C
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,557
tk (rullis 2500) (ilma käibemaksuta)
€ 0,68
tk (rullis 2500) (koos käibemaksuga)
2500
€ 0,557
tk (rullis 2500) (ilma käibemaksuta)
€ 0,68
tk (rullis 2500) (koos käibemaksuga)
2500
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Length
6.6mm
Typical Gate Charge @ Vgs
30 nC @ 10 V
Width
6.2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Height
2.4mm
Series
STripFET
Minimum Operating Temperature
-55 °C