Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
600 V
Package Type
PowerFLAT 5 x 6 HV
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
660 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
48 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6mm
Typical Gate Charge @ Vgs
8.8 nC @ 10 V
Height
0.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Päritoluriik
China
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 1,00
tk (rullis 3000) (ilma käibemaksuta)
€ 1,22
tk (rullis 3000) (koos käibemaksuga)
3000
€ 1,00
tk (rullis 3000) (ilma käibemaksuta)
€ 1,22
tk (rullis 3000) (koos käibemaksuga)
3000
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
600 V
Package Type
PowerFLAT 5 x 6 HV
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
660 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
48 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6mm
Typical Gate Charge @ Vgs
8.8 nC @ 10 V
Height
0.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Päritoluriik
China