Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
50 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Width
4.6mm
Transistor Material
Si
Length
10.4mm
Minimum Operating Temperature
-55 °C
Height
9.3mm
Toote üksikasjad
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 2,95
tk (pakis 5) (ilma käibemaksuta)
€ 3,599
tk (pakis 5) (koos käibemaksuga)
5
€ 2,95
tk (pakis 5) (ilma käibemaksuta)
€ 3,599
tk (pakis 5) (koos käibemaksuga)
5
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
5 - 5 | € 2,95 | € 14,75 |
10 - 95 | € 2,50 | € 12,50 |
100 - 495 | € 1,95 | € 9,75 |
500 - 995 | € 1,65 | € 8,25 |
1000+ | € 1,35 | € 6,75 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
50 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Width
4.6mm
Transistor Material
Si
Length
10.4mm
Minimum Operating Temperature
-55 °C
Height
9.3mm
Toote üksikasjad