STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 13 A, 600 V, 3-Pin TO-220 STP13NK60Z
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
66 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Height
9.15mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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€ 14,50
€ 1,45 tk (torus) (ilma käibemaksuta)
€ 17,98
€ 1,798 tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
10
€ 14,50
€ 1,45 tk (torus) (ilma käibemaksuta)
€ 17,98
€ 1,798 tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
10
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
| kogus | Ühikuhind | Per Tuub |
|---|---|---|
| 10 - 95 | € 1,45 | € 7,25 |
| 100 - 495 | € 1,10 | € 5,50 |
| 500 - 995 | € 0,948 | € 4,74 |
| 1000+ | € 0,879 | € 4,40 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
66 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Height
9.15mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products