Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Series
DeepGate, STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
10.4mm
Width
4.6mm
Transistor Material
Si
Typical Gate Charge @ Vgs
183 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
15.75mm
Toote üksikasjad
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 7,20
tk (ilma käibemaksuta)
€ 8,78
tk (koos käibemaksuga)
Standard
1
€ 7,20
tk (ilma käibemaksuta)
€ 8,78
tk (koos käibemaksuga)
Standard
1
Osta lahtiselt
kogus | Ühikuhind |
---|---|
1 - 4 | € 7,20 |
5 - 9 | € 6,90 |
10 - 24 | € 6,20 |
25 - 49 | € 5,60 |
50+ | € 5,30 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Series
DeepGate, STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
10.4mm
Width
4.6mm
Transistor Material
Si
Typical Gate Charge @ Vgs
183 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
15.75mm
Toote üksikasjad
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.