Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
60V
Package Type
SOIC
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
55mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2W
Minimum Operating Temperature
150°C
Typical Gate Charge Qg @ Vgs
15nC
Maximum Operating Temperature
-55°C
Transistor Configuration
Isolated
Height
1.25mm
Length
5mm
Standards/Approvals
No
Number of Elements per Chip
2
Automotive Standard
No
Product details
N-Channel STripFET™ Dual MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
€ 9.50
€ 1.90 Each (Supplied on a Reel) (Exc. Vat)
€ 11.78
€ 2.356 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
5
€ 9.50
€ 1.90 Each (Supplied on a Reel) (Exc. Vat)
€ 11.78
€ 2.356 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
5
| Quantity | Unit price | Per Reel |
|---|---|---|
| 5 - 5 | € 1.90 | € 9.50 |
| 10 - 20 | € 1.65 | € 8.25 |
| 25 - 95 | € 1.60 | € 8.00 |
| 100 - 495 | € 1.25 | € 6.25 |
| 500+ | € 1.05 | € 5.25 |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
60V
Package Type
SOIC
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
55mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2W
Minimum Operating Temperature
150°C
Typical Gate Charge Qg @ Vgs
15nC
Maximum Operating Temperature
-55°C
Transistor Configuration
Isolated
Height
1.25mm
Length
5mm
Standards/Approvals
No
Number of Elements per Chip
2
Automotive Standard
No
Product details
N-Channel STripFET™ Dual MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


