N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 STMicroelectronics STW120NF10

RS tootekood: 146-0412Bränd: STMicroelectronicsTootja Part nr.: STW120NF10
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

100 V

Package Type

TO-247

Series

STripFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

10.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

312 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

15.75mm

Typical Gate Charge @ Vgs

172 nC @ 10 V

Width

5.15mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

20.15mm

Päritoluriik

China

Toote üksikasjad

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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€ 84,00

€ 2,80 tk (torus 30) (ilma käibemaksuta)

€ 102,48

€ 3,416 tk (torus 30) (koos käibemaksuga)

N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 STMicroelectronics STW120NF10

€ 84,00

€ 2,80 tk (torus 30) (ilma käibemaksuta)

€ 102,48

€ 3,416 tk (torus 30) (koos käibemaksuga)

N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 STMicroelectronics STW120NF10
Lao andmed ajutiselt ei ole saadaval.

Osta lahtiselt

kogusÜhikuhindPer Tuub
30 - 60€ 2,80€ 84,00
90 - 480€ 2,35€ 70,50
510 - 960€ 2,10€ 63,00
990 - 4980€ 1,95€ 58,50
5010+€ 1,65€ 49,50

Ideate. Create. Collaborate

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

100 V

Package Type

TO-247

Series

STripFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

10.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

312 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

15.75mm

Typical Gate Charge @ Vgs

172 nC @ 10 V

Width

5.15mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

20.15mm

Päritoluriik

China

Toote üksikasjad

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more