Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
600 V
Series
MDmesh DM2
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
210 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.75mm
Typical Gate Charge @ Vgs
54 nC @ 10 V
Width
5.15mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Height
20.15mm
Päritoluriik
China
Toote üksikasjad
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
MOSFET Transistors, STMicroelectronics
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Palun kontrollige hiljem uuesti.
€ 6,90
tk (torus) (ilma käibemaksuta)
€ 8,418
tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
2
€ 6,90
tk (torus) (ilma käibemaksuta)
€ 8,418
tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
2
Osta lahtiselt
kogus | Ühikuhind | Per Tuub |
---|---|---|
2 - 8 | € 6,90 | € 13,80 |
10 - 18 | € 6,50 | € 13,00 |
20 - 48 | € 5,90 | € 11,80 |
50 - 98 | € 5,30 | € 10,60 |
100+ | € 5,00 | € 10,00 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
600 V
Series
MDmesh DM2
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
210 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.75mm
Typical Gate Charge @ Vgs
54 nC @ 10 V
Width
5.15mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Height
20.15mm
Päritoluriik
China
Toote üksikasjad
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.