STMicroelectronics MDmesh M5 N-Channel MOSFET, 69 A, 650 V, 3-Pin TO-247 STW77N65M5
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
69 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Series
MDmesh M5
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
38 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
400 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+25 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
5.15mm
Length
15.75mm
Typical Gate Charge @ Vgs
185 nC @ 10 V
Height
20.15mm
Toote üksikasjad
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
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€ 426,00
€ 14,20 tk (torus 30) (ilma käibemaksuta)
€ 519,72
€ 17,324 tk (torus 30) (koos käibemaksuga)
30
€ 426,00
€ 14,20 tk (torus 30) (ilma käibemaksuta)
€ 519,72
€ 17,324 tk (torus 30) (koos käibemaksuga)
30
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
69 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Series
MDmesh M5
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
38 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
400 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+25 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
5.15mm
Length
15.75mm
Typical Gate Charge @ Vgs
185 nC @ 10 V
Height
20.15mm
Toote üksikasjad
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products